General description

The Low-Pressure Chemical Vapour Deposition (LPCVD) system supports stoichiometric and low-stress silicon nitride deposition on substrates ranging from small chips to wafer diameters up to 150 mm.

Equipment name and Company: MiniTytan 1600 / Tystar Corporation

Technical specification

• Maximum Temperature: 850 °C  
• Maximum Deposition Thickness for single run: 300 nm (stoichiometric), TBD (low-stress SiN)
• Process Gases: Dichlorosilane (DCS) and Ammonia (NH3)
• Wafer diameters:100 mm (4″) and 150 mm (6″)
• Small pieces are supported