Description

The PlasmaPro 100 Cobra ICP-RIE system uses a high-density inductively coupled plasma at low pressure to achieve high density plasma, for dry-etching of fluorine-sensitive substrates (i.e. silicon, SiO2, Si3N4, SiC) and oxygen-sensitive materials (i.e. carbon-based materials such as polymers or graphene). Substrate DC bias is driven by a separate RF generator, allowing independent control of radicals and ions, according to the process requirements. The process modules offer fast etch rates, excellent uniformity, high-throughput, high-precision and low-damage processes for wafer size up to 150 mm (6’).

Two electrodes are available for etching: i) a wide temperature range electrode (-150° C to +400° C) which can be cooled by liquid nitrogen, a fluid recirculating chiller or resistively heated. An optional blow out and fluid exchange unit can automate the process of switching modes; ii) A fluid controlled electrode fed by a re‑circulating chiller unit.

The machine will be shortly equipped with an automatic endpoint detector (EPD) for achieving optimal process results by means of Optical Emission Spectroscopy. The EPD ensures processes are carefully controlled and consistent for reliable and repeatable results both at the wafer-to-wafer and batch-to-batch level.

 Equipment name and Company: PlasmaPro 100 Cobra / Oxford Instruments

Technical specification:

• Available process gases (fluorine chemistry): SF6, C4F8, CHF3, Ar, O2

• Main etchable materials:
   -Silicon [High Aspect ratio Si anisotropic etch (Bosch process) and flat sidewalls pseudo-bosch etch]
  – anisotropic SiO2 etch
  – SiNx dry etch and other fluorine-sensitive materials (Silicon Carbide, niobium, etc)