Description

The ICP-CVD allows to deposit a large portfolio of high-quality films from room temperature to 400°C:

• Dielectrics: oxides, nitrides, metal oxides
• High quality films with low BOE etch rate
• Refractive Index Control
• Low Film Stress
• Very dense films – close to thermal oxide
• Gap fill 2:1 aspect ratio features based on 500 nm width gap
• if compared to PE-CVD, ICP-CVD depositions produce higher density films (i.e. better quality) at low temperatures (<150°C)

Technical specification

ICP-CVD improved features:

• Load-Lock for faster pumping
• Avoid hazardous gases (NH3, H2)
• Process Gas Lines (Digital MFCs): SF6, SH4, O2, N2, Ar.
• Low damage process for nanometer devices requirement
• Insulation/passivation/planarisation
• Lift off capabilities – reducing fabrication cycle time
• New advanced plasma Clean