General description

The ALD technique is a binary process in which two half reactions are thermally or plasma-activated by a sequential exposure to gas-phase precursors. The ALD technology is a self-limiting surface chemistry technique and materials are grown layer-by-layer with atomic resolution, thanks to multiple cycles. 

Equipment name and Company: THEIA / ForgeNano

Technical specification

The ForgeNano THEIA ALD tool is designed for repeatable and reliable deposition of high quality Atomic Layer Deposition (ALD) oxide, nitride and metal films. The Forge Nano THEIA ALD process system provides semi-automated wafer (and other substrates) transfer functions and fully automated deposition of ALD films. 

• Today available metalorganic precursors: TMA for the growth of Al2O3, TiCl4 for TiO2, DMZ for ZnO.
• Available oxidising precursor: H2O as co-reactant for the three metalorganic
• Available ALD process: thermal ALD, plasma-enhanced ALD
• Four temperature controllers: manifold (50 – 200 °C) and wafer (50 – 500 °C) for growth control, chamber (50 – 200 °C) and abatement (up to 650 °C, typical 200 – 250 °C) for evacuation control.
• Plasma gases: O2, N2
• ALD reaction chamber space: 200 mm x 200 mm x 4 mm
• Thickness control: QCM available